*Static drain-source on-resistance: RDS(on)≤0.02Ω
*Enhancement mode:
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance a.

*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -55 VGS Gate-Source Vol.

*Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and reliable device for use in a wide variety of applications.
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE .

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